Current confinement structure for vertical cavity surface emitting laser

ABSTRACT

A vertical cavity surface emitting laser (VCSEL) structure and fabrication method therefor are described in which a subsurface air, gas, or vacuum current confinement method is used to restrict the area of electrical flow in the active region. Using vertical hollow shafts to access a subsurface current confinement layer, a selective lateral etching process is used to form a plurality of subsurface cavities in the current confinement layer, the lateral etching process continuing until the subsurface cavities laterally merge to form a single subsurface circumferential cavity that surrounds a desired current confinement zone. Because the subsurface circumferential cavity is filled with air, gas, or vacuum, the stresses associated with oxidation-based current confinement methods are avoided. Additionally, because the confinement is achieved by subsurface cavity structures, overall mechanical strength of the current-confining region is maintained.

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of Provisional ApplicationSer. No. 60/278,715, filed Mar. 26, 2001, which is incorporated byreference herein.

FIELD

[0002] This patent specification relates to semiconductor lasers. Moreparticularly, it relates to vertical cavity surface emitting lasers(VCSELs) in which electric current requires lateral confinement inpassing through an active region.

BACKGROUND

[0003] Solid-state semiconductor lasers represent desirable lightsources for a variety of applications including optical datacommunications, telecommunications, and other applications. A verticalcavity surface emitting laser (VCSEL) is a solid-state semiconductorlaser in which light is emitted from the surface of a monolithicstructure of semiconductor layers, in a direction normal to the surface.This is in contrast to the more commonly used edge-emitting laser, inwhich light is emitted from the edge of the wafer. Whereas edge-emittinglasers rely on facet mirrors formed at the wafer edge by cleaving or dryetching, the operation of VCSELs is enabled through the use ofdistributed Bragg reflector (DBR) mirrors for longitudinal opticalconfinement. VCSELs are advantageous over edge-emitting lasers in that(i) they have a lower-divergence, circularly-shaped laser beam, (ii) maybe manufactured using standard fabrication processes such as those usedin silicon VLSI technology, (iii) may be tested at the wafer level priorto packaging, and (iv) may be fabricated in dense 2-dimensional arraysfor lower cost and higher volume.

[0004] As in any laser, the overall structure of a VCSEL is that of twoend mirrors on each side of an active region, the active regionproducing the light responsive to an electric current therethrough.However, the active region is a thin semiconductor structure, and theend mirrors are distributed Bragg reflector mirrors (“DBR mirrors”)comprising alternating layers of differently-indexed material such thatlight of only the desired wavelengths is reflected. Further generalinformation on VCSELs may be found in the following references, each ofwhich is incorporated by reference herein: Cheng and Dutta, eds.,Vertical-Cavity Surface-Emitting Lasers: Technology and Applications,Vol. 10 of Optoelectronic Properties of Semiconductors andSuperlattices, Manasreh, ed., Gordon and Breach Science Publishers(2000); Sale, T. E., Vertical Cavity Surface Emitting Lasers, Wiley &Sons (1995); and Dutton, Understanding Optical Communications (PrenticeHall 1998), at pp. 159-161.

[0005] Today, VCSELs are widely used in local area networks and in veryshort-reach applications such as connections between electronic routers,the back planes of computers, computers to disk farms and computers tosensors, and curb to home, at wavelengths of about 650 nm to 980 nm. Forlong-distance fiber optic communications applications, e.g. generallyrequiring transmission distances of greater than 10 km, VCSELS havinglonger output wavelengths of 1300-1550 nm will be useful. Today,commercially-available VCSELs are directly modulated to frequencies of2.5 Gb/s, while direct modulation of up to 20 Gb/s has been reached inresearch laboratories. With increasing demands for bandwidth, it becomesdesirable to develop practical and reliable VCSELs with modulationfrequencies of greater than 10 Gb/s.

[0006] One problem in the practical realization of higher VCSELmodulation frequencies exists in regard to current confinement, whichrelates generally to the confinement of electrical current passingthrough the active layer to a small lateral portion of that layer toincrease current density. At higher modulation frequencies, it isnecessary to increase the photon density in the optical cavity toincrease the relaxation oscillation frequency of the laser. The increasein photon density necessitates an increase in the injected currentdensity of the laser which, in turn, increases heating at the activelayer. Depending on the laser structure, this increase in heat can causethe laser to have a reduced lifetime.

[0007] Proper current confinement of the injected electrons and holes tothe active area is important to achieve a highly efficient laser. It isnot uncommon for a VCSEL to have a desired “wall plug” efficiency, i.e.,the ratio of optical power emitted by the laser over the electricalpower applied, in excess of 50%. High wall plug efficiency is necessaryfor high frequency operation to minimize excess heating. Several methodsare in use to achieve proper current confinement, including protonimplantation methods, mesa methods, buried regrowth methods, andoxide-based methods. Disadvantages exist with these methods, however.For example, one problem with proton implantation is that it cannotdefine a small sharp region due to the nature of ion implantation. Asanother example, in the mesa method, the mesa is non-planar and hasdifficulty in passivation, resulting in poor reliability. As anotherexample, buried regrowth structures are more complex to manufacture andresult in a reduced yield.

[0008] Oxide confinement, in which layers adjacent to the active layerare selectively oxidized such that current is confined to a smallnon-oxidized portion, is generally the most widely used method tomanufacture low threshold and efficient VCSELs. See Jewell et. al.,“Vertical cavity surface emitting lasers: design, growth, fabrication,characterization”, IEEE Journal of Quantum Electronics, vol. 27, no. 6,pp. 1332-1346 (June 1991), which is incorporated by reference herein.Oxide-confined VCSELs have achieved sub-milliampere threshold currentand single mode operation. See, e.g., Deppe et al, “Low-thresholdvertical cavity surface emitting lasers based on oxide confinement andhigh contrast distributed Bragg reflectors:” IEEE Journal of SelectedTopics in Quantum Electronics, vol. 3, no. 3, pp. 893-904 (June 1997);Nishiyama et. al., “Multi-oxide layer structure for single modeoperation in vertical cavity surface emitting lasers,” IEEE PhotonicsTechnology Letters, vol. 12, no. 6, pp. 606-8 (June 2000); and Deppe,“Optoelectronic Properties of Semiconductors and Superlattices,” atChapter 1 of Cheng and Dutta, supra, each of these references beinghereby incorporated by reference herein.

[0009] Oxide confinement methods have some characteristics that mayresult in reduced lifetime of the laser at high current injectionoperations, as is needed for high modulation frequencies. For example,according to one oxide confinement method discussed in Choquette, “TheTechnology of Selectively Oxidized Vertical Cavity Lasers,” at Chapter 2of Cheng and Dutta, supra, which is incorporated by reference herein,the high content of Al in an AlGaAs or AlAs layer is oxidized usingnitrogen and steam at a temperature of 420-450 degrees Celsius. However,the AlGaAs or AlAs layer undergoes a dimensional change after theoxidation. This dimensional change causes stresses in the currentconfinement area, as well as in the active area, which is in closeproximity to the current confinement area. These stresses, as well asthe method of fabricating the oxide confining layer for the VCSEL, arediscussed in Choquette, supra.

[0010] Accordingly, it would be desirable to provide a VCSEL having acurrent confinement structure with advantages similar to those of theoxide confinement method, while at the same time avoiding thedisadvantages of the material stresses caused by the oxide confinementmethod that may reduce the lifetime of the VCSEL device.

SUMMARY

[0011] According to a preferred embodiment, a VCSEL structure andfabrication method therefor are provided, wherein a subsurface air, gas,or vacuum current confinement method is used to restrict the area ofelectrical flow in the active region. Because air, gas, or vacuum isused, the stresses caused in oxidation-based current confinement methodsare avoided. Additionally, because the confinement is achieved bysubsurface cavity structures, overall mechanical strength of thecurrent-confining region is maintained, such that possible “collapse” ofthe current-confining structure is not a problem.

[0012] According to a preferred embodiment, a vertical cavity structureis formed comprising a lower distributed Bragg reflector (DBR), an upperDBR, an active layer positioned between the lower DBR and the upper DBR,and a current confinement layer positioned adjacent to the active layer.The current confinement layer comprises a semiconductor material that islaterally etchable by a selective etchant to which the upper DBRmaterial and active layer materials are etch-resistant. Three or morehollow vertical shafts are formed through the upper DBR layer andcurrent confinement layer, the hollow vertical shafts being positionedoutside a desired current confinement zone, the centers of the hollowvertical shafts forming a polygon that laterally circumscribes an areaaround the desired current confinement zone. The selective etchant isthen applied, laterally etching away the current confinement layeroutwardly from the axis of each hollow vertical shaft, forming asubsurface cavity around each hollow vertical shaft at the currentconfinement layer. The lateral etching process is continued until thesubsurface cavities merge together to form a single subsurfacecircumferential cavity around the desired current confinement zone.Electrical current is confined to the current confinement zone as itpasses through the current confinement layer. After optionally fillingthe subsurface circumferential cavity with an inert gas or other inertnon-solid material, the hollow vertical shafts are sealed off by apolyimide material, a gold plating material, and/or a dielectricmaterial.

DESCRIPTION OF THE DRAWINGS

[0013]FIG. 1 illustrates a side view of a vertical cavity surfaceemitting laser (VCSEL) according to a preferred embodiment;

[0014]FIG. 2 illustrates an exploded perspective view of a currentconfinement structure according to a preferred embodiment;

[0015]FIG. 3 illustrates an exploded perspective view of a currentconfinement structure according to a preferred embodiment; and

[0016] FIGS. 4-8 illustrate the VCSEL of FIG. 1 during different stagesof the device fabrication process.

DESCRIPTION

[0017] According to one preferred embodiment, to overcome thelimitations of the oxide-confinement method and the mesa-confinementmethod, a sub surface air aperture method is provided. Instead ofoxidizing the layer near the active region (e.g., the AlGaAs layer) asin hole-defined oxidation (see Chua, C. L. et. al., “Planar laterallyoxidized vertical-cavity lasers for low-threshold high-densitytop-surface-emitting arrays,” IEEE Photonics Technology Letters, Vol. 9,No. 8, pp. 1060-2 (August 1997), which is incorporated by referenceherein; see also Choquette, supra at p. 86), that layer is selectivelyetched away in a sub-surface etching process until only a verticalcolumn, laterally circumscribed and isolated by an air cavity, remainsat that layer beneath the surface of the wafer. Electrical current istherefore confined to the vertical column when passing from above thatlayer to below that layer.

[0018] The method of the preferred embodiments is in contrast to simplyetching a mesa, as in earlier VCSEL fabrications (see Jewell, supra atp. 1338), where the process is highly nonplanar, resulting inmanufacturing difficulty, and where the exposed mesa is difficult topassivate, resulting in degradation of the mesa due to oxidation of theAlGaAs layers and electrical degradations such as increases in leakagecurrent. In a conventional mesa structure, due to non-uniform etchingrates of the various layers, cantilever structures may result. Suchcantilevered structures can collapse, resulting in a structure that isnot desirable in the manufacturing of a reliable, reproducible VCSEL.See Deppe, supra at p. 89, where such a collapsed structure is shown.

[0019]FIG. 1 illustrates a side view of a vertical cavity surfaceemitting laser (VCSEL) 100 according to a preferred embodiment. VCSEL100 comprises a substrate 102, a lower DBR 104, an n-doped semiconductorlayer 106, an active layer 108 such as a multi-quantum well (MQW)structure, a current confinement layer 112, a p-doped semiconductorlayer 114, an upper DBR 116, an upper ohmic contact 120, a lower ohmiccontact 122, and an antireflection-coated aperture 124. In the currentconfinement layer 112 is formed a subsurface circumferential cavity 128that surrounds a current confinement zone 126. Current is confined tocurrent confinement zone 126 as indicated by conceptual current arrowsin FIG. 1. Outside the current confinement zone 126 an isolation region130 is formed by proton implantation or ion implantation that preventscurrent from flowing around the outside of the subsurfacecircumferential cavity 128. Vertical shafts 125 used during theformation of the subsurface circumferential cavity 128 are, plugged withinert spacer material such as a dielectric material 118. As used herein,the term shaft is used to denote a hole (like a mine shaft) rather thanto denote a solid member (like a drive shaft). Other materials may beused to seal the vertical shafts 125 such as polyamide material.Alternatively, the upper ohmic contact 120 may protrude somewhat intothe vertical shafts 125 to seal them and therefore provide the sealingfunction. The subsurface circumferential cavity 128 is preferably sealedto contain an inert gas such as N₂, Ar, or He, but may alternativelycontain regular air or other nonsolid material.

[0020]FIG. 2 illustrates an exploded perspective view of the p-layer114, the current confinement layer 112, and the active layer 108. In theembodiment shown there are four vertical shafts 125 spaced at thevertexes of a 4-sided polygon, the vertical shafts 125 laterallycircumscribing the current confinement zone 126. In general, there maybe any number M>2 of vertical shafts 125 placed at roughly regularangular spacings of 360/M degrees around a center of the currentconfinement zone 126, the centers of the vertical shafts being locatedat the vertices of an M-sided polygon. However, in order to ensuremechanical stability of the device, there should not be so many verticalshafts 125 so as to cause them to merge together into a single “canyon.”

[0021] If the current confinement layer 112 is viewed in isolation, thecurrent confinement zone 126 resembles a small “island” of semiconductormaterial surrounded by empty space that is the subsurfacecircumferential cavity 128. In the embodiment of FIG. 2, it is presumedthat the lateral etching of the current confinement layer 112 isanisotropic (directional) in two perpendicular lattice directions. Thecurrent confinement zone 126 is a column of semiconductor material,often of a somewhat irregular lateral shape, that extends from theactive layer 110 beneath the current confinement layer 112 to thep-doped semiconductor layer 116 above the current confinement layer 112.The section of current confinement layer 112 lying outside thesubsurface circumferential cavity 128, herein termed an outer supportelement 113, provides a mechanical support for the upper layers to keepthe shape and size of the subsurface circumferential cavity 128 intact.The outer support element 113 is ion-implanted, proton-implanted, orotherwise treated to be non-conducting, such that the current isrestricted to the current confinement zone 126.

[0022]FIG. 3 illustrates an exploded perspective view of a p-layer 114′,a current confinement layer 112′, and an active layer 108′ in which thelateral etching process is isotropic (same in all directions). Roughlyspeaking, if all vertical shafts are equally placed around a circle ofradius R2 centered on the current confinement zone 126′, and if and thelateral etching process forms lateral etches into the currentconfinement layer of average radius R1 (see the outline of a subsurfacecavity 206′ outwardly etched from the axis 204′), the currentconfinement zone 126′ will have an average radius of roughly R2-R1. Asindicated in FIGS. 2-3, the current confinement zones 126 and 126′ havea somewhat irregular geometric shape, but any sharp corers will likelybe dulled by the etching process.

[0023] FIGS. 4-7 show views of structures corresponding to differentpoints during a VCSEL fabrication process in accordance with a preferredembodiment. To fabricate a VCSEL in accordance with a preferredembodiment, the layers 102-116 are first generated using conventionalmethods through to the top DBR layer 116 (FIG. 4). FIG. 4 shows asimplified diagram of a vertical cavity structure prior to formation ofthe current confinement structure. Generally speaking, the currentconfinement layer 112 will be as close as possible to the active region108 of the VCSEL, so that the current does not appreciably spread outafter being confined and before passing through the active region 108.Thus, the layer beneath the current confinement layer will usually be anactive region layer, although the scope of the preferred embodiments isnot so limited. As shown in FIG. 5, the structure is ion-implanted toform the non-conductive implanted region 130, which is annularlydisposed around a center axis of the device.

[0024] As shown in FIG. 6, hollow vertical shafts 125 are then patternedon the surface of the device beginning at the top DBR 116 and etcheddown until they reach at least the current confinement layer 112. Asshown in FIG. 7, a selective etchant is then used to etch only thecurrent confinement layer 112. The current confinement layer 112 islaterally etched away outwardly from the axis of each hollow verticalshaft 125, forming a subsurface cavity laterally around each hollowvertical shaft 125. The lateral etching process is continued until thesubsurface cavities merge together to form a single subsurfacecircumferential cavity 128 around the desired current confinement zone126.

[0025] Thus, the lateral etch proceeds until a desired amount ofvertical column material remains to form the current confinement zone126. The etches will usually be anisotropic along crystal directions ofthe layer etched, and therefore the etched regions are square orrectangular (or approximately so) when viewed from the top (FIG. 2). Ata minimum the etch should proceed until a convergence or merging isreached, in which the air cavity etched from each hole merges into theair cavity etched from each neighboring hole to form the singlesubsurface circumferential cavity 128. FIG. 7 shows a side view of thesub-surface structure after the etch process.

[0026] In some respects, the VCSEL fabrication process of the preferredembodiments is similar to that described in Choquette, supra, i.e. ahole defined oxide-aperture method, except that an etching step is usedinstead of an oxidation step. Advantageously, however, thecurrent-confining layer 112 can be made of any of a variety ofmaterials, whereas the current-confining layer in the oxide-aperturemethod must be readily oxidizable (e.g., AlGaAs). In the oxide-aperturemethod, the oxidation process requires a high Al content in AlGaAs, orAlAs, which have higher barriers to the current (electron/hole)injection process. This will result in a higher voltage for the deviceand hence a lower wall plug efficiency. According to a preferredembodiment, a lower-bandgap material than AlGaAs may be selected for thecurrent-confining layer 112, such as InGaAs (or related materials suchas InGaAsP). The use of this lower-bandgap material results in a lowervoltage across the current confining region and therefore less heatingand higher wall plug efficiency. Because the current confinement zone126 is on the “p” side of the active region 108 in the embodiment ofFIG. 1, the current confinement layer should comprise a p-dopedsemiconductor material (e.g., p-InGaAs) or an undoped semiconductormaterial (e.g., i-InGaAs). The scope of the preferred embodiments is notso limited, however. In another preferred embodiment, the currentconfinement zone is on the “n” side of the active region, the currentconfinement layer comprising an n-doped semiconductor material or anundoped semiconductor material.

[0027] The material for the current-confining layer 112 should beselected such that it etches more quickly than the material above it inorder for the sub-surface cavity structure to be properly formed, and toavoid undesired etching artifacts in the material above and below it.Because the respective layers are not “masked” along the vertical wallsof the holes, it should be noted that the etching of current confinementlayer 112 may also result in some etching of the upper DBR mirror 116and the active layer 108. The current confinement layer 112 should beselected such that the etch rate for this layer is significantly (atleast a factor of 2 faster) faster than the etch rate of the surroundingmaterial. For example, an current confinement layer 112 composed ofAlGaAs with Al mole fraction of 0.92 or greater, will result in etchingof the current confinement layer 112 faster than the surroundingmaterial using buffered HF. InGaAs with an In mole fraction of 0.01 to0.2 may also be used as a current confinement layer 112. In cases wherethe active layer is composed of the same material as the currentconfinement layer 112, care must be taken in the positioning of thedepth of the vertical shafts such that it does not penetrate the activelayer. Etch stop layers can be used to prevent such penetration.

[0028] It is to be appreciated that the overall structure incorporatingthe subsurface cavity is mechanically stable and resistant to collapse,since it is not a cantilever structure as in the case of the mesa methodof Deppe, supra. In addition, the overall wafer surface remainssubstantially planar which allows high-yield manufacturing.

[0029] As shown in FIG. 8, to passivate the sub surface air aperture,the vertical shafts 125 used to access the current confinement layer canbe sealed in a variety of manners, either gold plating to assist in heatremoval, dielectric seals using plasma enhanced chemical vapordeposition (PECVD), or polymer seal using polyimide. In addition, one ormore inert gases can be sealed inside the structure, such as N₂, Ar, orHe, for enhanced passivation or assistance in heat removal.

[0030] As described supra, the resulting cavity formed by the etchingprocess will be generally square or rectangular for an anisotropic etch,and generally circular or oblong for an isotropic, etch. More generally,however, the air aperture may generally be circular, rectangular, or ofanother shape depending on the type of holes, the number of holes used,and the etching type and conditions. Optionally, the regions around thesub-surface air aperture may be filled with an inert gas which mayconsist of N₂, Ar and/or He for hermeticity and to help thermalconduction. Proton ion implantation is used also for isolation 16 reduceparasitic capacitances and to prevent undesirable current injectionpatterns from the etched trenches that may be filled with a conductingmaterial that may affect the mode pattern of the VCSEL.

[0031] In an optional preferred embodiment, multiple sub-surface airapertures may be used to achieve single spatial mode operation. Insteadof etching only a single layer of material to form a single sub-surfacecavity, a plurality of alternating layers of material may be etched toform several sub-surface cavities, in a manner that is perhaps analogousto a multi-level underground parking garage. Just as current confinementthrough multi-level oxidation may be advantageously used to suppresshigher-order modes in the vertical laser cavity (see Nishiyama, N. et.al., “Multi-oxide layer structure for single-mode operation in verticalcavity surface emitting lasers,” IEEE Photonics Technology Letters, Vol.12, No. 6, pp. 606-8 (2000), which is incorporated by reference herein),it has been found that multi-level subsurface cavity structures may alsobe used to suppress higher-order modes in the vertical laser cavity,thereby enhancing single-mode operation.

[0032] Many other VCSEL configurations are within the scope of thepreferred embodiments, e.g., a top dielectric DBR and a top emittingVCSEL structure. A bottom emitting structure is shown for the device ofFIG. 1 because the active region is closer to the p-contact and heat canbe removed efficiently from the VCSEL by bonding the p-contact to a heatsink. However, it is to be appreciated that a person skilled in the artwould be readily able to adapt the methods and structures of thepreferred embodiments to a top-emitting structure.

[0033] By way of further example, in the device of FIG. 1 the activeregion is “below” the subsurface circumferential cavity. However, it isto be appreciated that a person skilled in the art would be readily ableto adapt the methods and structures of the preferred embodiments to aVCSEL In which the active region is “above” the subsurfacecircumferential cavity. It may be advantageous to have the active region“above” the subsurface circumferential cavity since then it is closer tothe p-contact and the heat sink and has more material to help thermalconduction of the heat away from the junction toward the heat sink.

[0034] Whereas many alterations and modifications of the presentinvention will no doubt become apparent to a person of ordinary skill inthe art after having read the foregoing description, it is to beunderstood that the particular embodiments shown and described by way ofillustration are in no way intended to be considered limiting. By way ofexample, it is to be appreciated that a person skilled in the art wouldbe readily able to adapt the methods and structures of the preferredembodiments to short-wavelength VCSELs, to VCSELs comprising any of avariety of different active region material systems, to VCSELscomprising any of a variety of different DBR materials, and in generalto many different kinds of VCSELs. Therefore, reference to the detailsof the preferred embodiments are not intended to limit their scope,which is limited only by the scope of the claims set forth below.

What is claimed is:
 1. In a vertical cavity surface emitting laser(VCSEL) comprising vertically stacked material layers including a firstmaterial layer positioned above a second material layer, an intermediateregion being disposed therebetween, electrical current flowing betweenthe first material layer and the second material layer through theintermediate region during operation of the VCSEL, a current confinementstructure for laterally restricting the flow of electrical currentpassing through the intermediate region, comprising: a central column ofsemiconductor material vertically extending between the first and secondmaterial layers; a subsurface cavity laterally circumscribing saidcentral column of semiconductor material and vertically extendingbetween the first and second material layers, said subsurface cavitybeing filled with a non-solid material; and an outer support elementlaterally surrounding said subsurface cavity, said outer support elementcomprising a non-conducting material, said outer support elementmechanically supporting said first and second material layers inconjunction with said central column of semiconductor material, theelectrical current being laterally confined to said central column whilepassing from the first layer to the second layer.
 2. The currentconfinement structure of claim 1, the VCSEL having a plurality of uppermaterial layers positioned above said first material layer, furthercomprising at least three vertically etched shafts extending downwardfrom a top surface of said upper material layers to said subsurfacecavity.
 3. The current confinement structure of claim 2, wherein saidvertically etched shafts are plugged such that said subsurface cavity issealed.
 4. The current confinement structure of claim 3, wherein saidnon-solid material is air or vacuum.
 5. The current confinementstructure of claim 3, wherein said non-solid material comprises an inertgas.
 6. The current confinement structure of claim 3, wherein saidvertically etched shafts are plugged with a polyamide sealer.
 7. Thecurrent confinement structure of claim 1, said outer support element andsaid central column being formed from a common layer of semiconductormaterial, said outer support element being implanted so as to benon-conductive.
 8. The current confinement structure of claim 7, saidfirst material layer and said upper material layers being implanted inlateral regions thereof lying above said outer support element.
 9. Thecurrent confinement structure of claim 8, the VCSEL having a pluralityof lower material layers positioned below the second material layer,said second material layer being an active layer, wherein electricalcurrent flowing through the second material layer to the lower materiallayers is substantially confined to a lateral area corresponding to alateral extent of said central column of semiconductor material.
 10. Thecurrent confinement structure of claim 8, said first material layerbeing an active layer, wherein electrical current flowing through thefirst material layer to the second material layers is substantiallyconfined to a lateral area corresponding to a lateral extent of saidcentral column.
 11. The current confinement structure of claim 8,wherein said common layer of semiconductor material forming said centralcolumn and said outer support element comprises an oxidation-resistant,low-bandgap semiconductor material.
 12. The current confinementstructure of claim 11, said common layer of semiconductor material beingInGaAs or InGaAsP.
 13. The current confinement structure of claim 12,the VCSEL having a plurality of lower material layers positioned belowthe second material layer, said second material layer being an activelayer, wherein said upper material layers comprise a distributed Braggreflector (DBR), wherein said first material layer is a p-dopedsemiconductor layer, and wherein said lower material layers comprise aDBR.
 14. A vertical cavity surface emitting laser (VCSEL) formed from avertical stack of substantially flat material layers, comprising: anactive layer disposed between a first set of material layers thereaboveand a second set of material layers therebelow, electrical currentflowing between said first set and said second set of material layersduring operation of the VCSEL; and a current confinement layerpositioned substantially adjacent to said active layer, said currentconfinement layer being partitioned into a central current confinementzone comprising a semiconductor material and an outer support zonecomprising an implanted semiconductor material, said central currentconfinement zone being separated from said outer support zone by asubsurface cavity laterally circumscribing said central currentconfinement zone, the electrical current flowing through said activelayer only in a laterally extending area substantially corresponding tosaid current confinement zone of said current confinement layer.
 15. TheVCSEL of claim 14, at least three vertically etched shafts extendingdownward from a top surface of said first set of material layers to saidsubsurface cavity, wherein each of said first set of material layersremains laterally integral over said central current confinement zone,said subsurface cavity, and said outer support zone at locations otherthan said vertically etched shafts.
 16. The VCSEL of claim 15, whereinsaid vertically etched shafts are plugged such that said subsurfacecavity is sealed.
 17. The VCSEL of claim 16, wherein said subsurfacecavity is filled with air, vacuum, or an inert gas.
 18. The VCSEL ofclaim 16, wherein said vertically etched shafts are plugged with apolyamide sealer.
 19. The VCSEL of claim 14, wherein said semiconductormaterial of said current confinement layer is oxidation-resistant. 20.The VCSEL of claim 19, wherein said semiconductor material of saidcurrent confinement layer is a low-bandgap semiconductor material. 21.The VCSEL of claim 20, wherein said semiconductor material of saidcurrents confinement layer is InGaAs or InGaAsP.
 22. A method offabricating a current confinement structure into a partially-constructedVCSEL, said partially-constructed VCSEL having an active layer disposedbetween an upper set of material layers thereabove and a lower set ofmaterial layers therebelow, said partially-constructed VCSEL furthercomprising a current confinement layer positioned below the upper set ofmaterial layers and immediately above the active layer, comprising:forming at least three hollow vertical shafts extending downward from atop surface of the upper set of material layers to at least a bottom ofthe current confinement layer, the vertical shafts being laterallypositioned outside a desired current confinement zone; and etching witha selective etchant that laterally etches the current confinement layersubstantially faster than it etches any of the upper material layers andsubstantially faster than it etches the active layer, the currentconfinement layer thereby being etched away outwardly from an axis ofeach vertical shaft so as to form a subsurface void around each hollowvertical shaft at the current confinement layer, said etching continuinguntil the subsurface cavities merge together to form a single subsurfacecircumferential cavity around the desired current confinement zone. 23.The method of claim 22, further comprising, prior to said forming the atleast three vertical shafts, implanting said upper material layers andsaid current confinement layer in lateral areas lying outside thecurrent confinement zone.
 24. The method of claim 23, further comprisingsubjecting the partially-constructed VCSEL to a predeterminedsurrounding environment while sealing off the hollow vertical shafts,said predetermined surrounding environment being sufficient to cause thesubsurface circumferential cavity to contain a non-solid selected fromthe group consisting of: air, vacuum, and inert gas.
 25. The method ofclaim 24, wherein the hollow vertical shafts are sealed off with one ormore sealing materials selected from the group consisting of: apolyimide material, a metallization material, and a dielectric material.26. The method of claim 22, wherein M>2 hollow vertical shafts areformed, the hollow vertical shafts being spaced in a roughly circulararrangement outside of the desired current confinement zone and beingangularly separated by roughly 360/M degrees around a center of theroughly circular arrangement.
 27. The method of claim 26, wherein thenumber M of hollow vertical shafts is equal to
 4. 28. The method ofclaim 22, wherein the current confinement layer comprises anoxidation-resistant material.
 29. The method of claim 22, wherein thecurrent confinement layer comprises a low-bandgap semiconductormaterial.
 30. The method of claim 22, wherein the current confinementlayer comprises InGaAs.